GBC846 가격 및 재고 조회

GBC846 Description Package Dimensions 1, 2 NPN EPITAXIAL PLANAR TRANSISTOR The GBC846 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0

ISSUED DATE :2005, 10, 21 REVISED DATE : GBC338 Description Features NPN SILICON TRANSISTOR The GBC338 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC328 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b

ISSUED DATE :2005, 03, 25 REVISED DATE :2005, 10, 21B GBC546 Description Features NPN SILICON TRANSISTOR The GBC546 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC556 D Package Dimensions E S1 TO-92 A S E A T IN

ISSUED DATE :2005, 10, 21 REVISED DATE : GBC547 Description Features NPN SILICON TRANSISTOR The GBC547 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC557 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1

ISSUED DATE :2005, 10, 21 REVISED DATE : GBC548 Description Features NPN SILICON TRANSISTOR The GBC548 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC558 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1

ISSUED DATE :2005, 03, 25 REVISED DATE :2005, 10, 21B GBC556 Description Features PNP SILICON TRANSISTOR The GBC556 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA Complementary to GBC546 D Package Dimensions E S1 TO-92 A S E A T I