GJ35N03 데이터시트 PDF ( Data sheet )

Pb Free Plating Product ISSUED DATE :2006, 08, 16 REVISED DATE : GJ35N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 13.5m 36A The GJ35N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The

Pb Free Plating Product ISSUED DATE :2003, 07, 31 REVISED DATE :2007, 01, 25D GJ3055 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 26m 15A Description The GJ3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and co

Pb Free Plating Product ISSUED DATE :2006, 05, 19 REVISED DATE :2006, 11, 09B GJ3055S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 25m 18A Description The GJ3055S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

ISSUED DATE :2005, 05, 12 REVISED DATE : GJ31C Description Features NP N EP ITAXI AL PL ANAR T RANSI STOR The GJ31C is designed for use in general purpose amplifier and switching applications. *Complementary to GJ32C Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80