GJ80LS02 데이터시트 PDF ( Data sheet )

Pb Free Plating Product ISSUED DATE :2006, 02, 15 REVISED DATE : GJ80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A Description The GJ80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-252 pack

ISSUED DATE :2005, 05, 06 REVISED DATE : GJ8050 Description Features NPN EPITAXIAL TRANSISTOR The GJ8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8550 Package Dimensions TO-252 REF. A B

Pb Free Plating Product ISSUED DATE :2006, 02, 15 REVISED DATE : GJ80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A Description The GJ80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-252 pack

Pb Free Plating Product ISSUED DATE :2005, 11, 22 REVISED DATE : GJ80N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8m 80A The GJ80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-