P1004B 데이터시트 PDF ( Data sheet )

P1004BS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 11mΩ @VGS = 10V ID 53A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Curre

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1004BD TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 10mΩ ID 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS Drain-Source Voltage G

P1004BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 10mΩ @VGS = 10V ID 55A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current P

P1004BS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 11mΩ @VGS = 10V ID 53A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Curre

Bulletin I27125 rev. A 04, 99 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical d

P 1000 A ... P 1000 M Silicon Rectifiers Silizium Gleichrichter Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgeh use Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Geh usematerial UL94V-0 klassifiziert D

P 1000 A....P 1000 S 0, :  ;  4  ;  ; . +.  4  ;  ; .   ;    ; ,  26 7 $ 8 2: 7 $ 8 2:: 7 $ 8  $ $ $ $ $ $ $ $   = ; . Axial lead diode Standard silicon rectifier diodes P 1000 A....P 1000 S Forward Current: 10 A Reverse Voltage: 50 t