RJK2017DPP 데이터시트 PDF ( Data sheet )

RJK2017DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1797-0200 Rev.2.00 Aug 26, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute M

RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 G Absolute Maximum Ratings I

RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) SMT3 2.9 1.1 0.4 (3) zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). 0.8 (2) (1) 1.6 2.8 0.95 0.95 0.15 1.9 zApplications Switching zPackaging spe

RJK005N03FRA 　　Nch 30V 500mA Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 580mΩ ±500mA 200mW lFeatures 1) Low on-resistance 2) Ultra low voltage drive (2.5V drive) 3) AEC-Q101 Qualified lOutline SOT-346 SC-59 SMT3 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplic

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10