RJL5012DPP-M0 데이터시트 PDF ( Data sheet )

RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1

NUMBER : RD-SDRJL-001 DATE :2003, 08, 13 -CL(REV:3) Single 10, 100 BASE-TX Filtered Connector Module MODEL NO. : RJL-001 Features Fully shielded magnetics protect data from internally generated digital noise Reduces the overall length of the signal path for improved common mode performance Implem

Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching R07DS0435EJ0200 (Previous: REJ03G1745-0100) Rev.2.00

RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching Features Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 23 G Absolute Maximum Ratings Item Symbol Drain to source