SPN30T10 데이터시트 PDF ( Data sheet )

SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN30T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC, DC conver

SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN30T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC, DC conver

Rev. 2.1 SPN01N60C3 VDS @ Tjmax RDS(on) ID 650 6 0.3 SOT-223 4 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv, dt rated Ultra low effective capacitances Improved transconductance V Ω A 3 2 1 VPS05163 Type Package Ordering

Preliminary data SPN01N60S5 Cool MOS Power-Transistor New revolutionary high voltage technology Ultra low gate charge Extreme dv, dt rated Optimized capacitances Improved noise immunity C O OLMO S Power Semiconductors Product Summary VDS @ Tjmax RDS(on) ID SOT-223 650 6 0.3 V A Ð

Rev. 2.1 SPN02N60C3 VDS @ Tjmax RDS(on) ID 650 3 0.4 SOT223 4 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv, dt rated Ultra V Ω A low effective capacitances 3 2 1 VPS05163 Type SPN02N60C3 Package SOT223 Ordering Code Q6