X3N170-71 데이터시트 PDF ( Data sheet )

N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 , 3N171 FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in act

N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 , 3N171 FEATURES HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in act

Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier, Switch 3N172 , 3N173 FEATURES CORPORATION High Input Impedance Diode Protected Gate PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . . . .

Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N190 , 3N191 FEATURES CORPORATION Very High Input Impedance High Gate Breakdown 3N190-3N191 Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (N