4AK15의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| 4AK15 Silicon N-Channel Power MOS FET Array 4AK15
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.095 , VGS = 4 V, I D = 8 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable fo   Hitachi Semiconductor |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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4AK18 Silicon N-Channel Power MOS FET Array 4AK18
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for Hitachi Semiconductor  |
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4AK19 Silicon N Channel MOS FET High Speed Power Switching 4AK19
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-727 (Z) 1st. Edition February 1999 Features
Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A 4 V gate drive devices. High density mounting
Outline
SP-10
3 D Hitachi Semiconductor |
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4AK20 Silicon N-Channel Power MOS FET Array 4AK20
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for mot Hitachi Semiconductor |
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4AK21 Silicon N-Channel Power MOS FET Array 4AK21
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor d Hitachi Semiconductor |
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4AK22 Silicon N-Channel Power MOS FET Array 4AK22
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for moto Hitachi Semiconductor |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |