FZT751Q 가격 및 재고 조회

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -60V IC = -3A High Continuous Current ICM = -6A Peak Pulse Current Low Saturation Voltage VCE(sat) < -300mV @ -1A Complementary NPN Type: FZT651Q Lead-

A Product Line of Diodes Incorporated Green FZT1051A 40V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features BVCEO > 40V IC = 5A High Continuous Collector Current ICM = 20A Peak Pulse Current Low Saturation Voltage VCE(sat) < 120mV @ 1A RSAT = 50mΩ @ 5A for a Low Equivalent On-Resistance

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4 - FEBRUARY 1998 FEATURES * * * * * * VCEO = 40V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A FZT1051A C E C B ABSOLUTE MAXIMUM RATI

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - MARCH 2001 FEATURES * * * * * * VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 78mΩ at 4.5A FZT1053A C E C B SOT223 ABSOLUTE MAXI

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - MARCH 2001 FEATURES * * * * * * VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 78mΩ at 4.5A FZT1053A C E C B SOT223 ABSOLUTE MAXI

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * VCEO = -12V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain FZT1147A C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Em