IRL620의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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| IRL620 Power MOSFET ( Transistor ) Previous Datasheet
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PD -9.1217
IRL620
HEXFET ® Power MOSFET
Dynamic dv, dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V Fast Switching Ease of paralleling Simple Drive Requirements Description
Third Generation HEXFETs from Int   International Rectifier |
| IRL620 Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRL620
FEATURES
Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 200V Lower RDS(ON): 0.609Ω (Typ.)
Absolute Maximum R  Fairchild Semiconductor |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
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IRL1004PBF Power MOSFET ( Transistor ) l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing te International Rectifier  |
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IRL1004S HEXFET Power MOSFET
PD - 91644A
IRL1004S IRL1004L
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
VDSS = 40V
G S
RDS(on) = 0.0065Ω ID = 130A
Fift International Rectifier |
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IRL1004SPBF (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRL1004SPbF IRL1004LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G S
RDS(on) = 0.0065Ω International Rectifier |
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IRL1104 HEXFET Power MOSFET
PD -91805
IRL1104
HEXFET® Power MOSFET
Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv, dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated Description
q
D
VDSS = 40V
G S
RDS(on) = 0.008Ω ID = 104A
Fifth Generation International Rectifier |
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IRL1104L Power MOSFET ( Transistor ) PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processi International Rectifier |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |