K1365 가격 및 재고 조회

2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSII.5) 2SK1365 Switching Power Supply Applications - Low drain source ON resistance : RDS (ON) = 1.5 Ω (typ.) - High forward transfer admittance : |Yfs| = 4.0 S (typ.) - Low leakage current : IDSS = 300 μA (max) (VDS = 800

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac

2SK1304 Silicon N Channel MOS FET REJ03G0923-0200 (Previous: ADE-208-1262) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converte

2SK1305 Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package co

2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 12 3 1. G

2SK1306 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1