2SD1071 데이터시트 PDF ( Data sheet )

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1071 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power a

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

UNISONIC TECHNOLOGIES CO., LTD 2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER DESCRIPTION The UTC 2SD1071 is a high voltage power amplifier, it uses UTC advanced technology to provide the customers high DC current gain and low saturation voltage, etc. The UTC

Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Abs

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package

Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a