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2SD1251 데이터시트 PDF ( Data sheet )이 부품은 Silicon NPN triple diffusion junction type(For power amplification)의 기능을 가지고 있습니다. |
2SD1251의 핀아웃 및 회로도를 보려면 검색 결과에 있는 PDF 아이콘을 클릭하세요. |
번호 | 부품번호 | 상세설명 및 전자부품 기능 | 제조사 |
1 | 2SD1251 Panasonic Semiconductor | Silicon NPN triple diffusion junction type(For power amplification) Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q
10.5min.
Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed cir | ![]() |
2 | 2SD1251 Kexin | Silicon NPN Triple Diffusion Junction Type SMD Type
Transistors
Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Wide area of safe operation.
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
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3 | 2SD1251A Panasonic Semiconductor | Silicon NPN triple diffusion junction type(For power amplification) Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q
10.5min.
Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed cir | ![]() |
4 | 2SD1251A Kexin | Silicon NPN Triple Diffusion Junction Type SMD Type
Transistors
Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Wide area of safe operation.
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
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데이터시트 다운로드![]()
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국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
부품번호 | 상세설명 | 제조업체 | |
2SD0592A | Silicon NPN epitaxial planar type
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat)
0.7±0.1
■ Abs |
![]() Panasonic Semiconductor |
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부품번호 | 상세설명 | 제조업체 | |
2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package |
![]() Panasonic Semiconductor |
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부품번호 | 상세설명 | 제조업체 | |
2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a |
![]() Panasonic Semiconductor |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 사이트맵 : 1, 2 |