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2SD1275 데이터시트 PDF ( Data sheet )이 부품은 Silicon PNP epitaxial planar type Darlington의 기능을 가지고 있습니다. |
2SD1275의 핀아웃 및 회로도를 보려면 검색 결과에 있는 PDF 아이콘을 클릭하세요. |
번호 | 부품번호 | 상세설명 및 전자부품 기능 | 제조사 |
1 | 2SD1275 Panasonic Semiconductor | Silicon NPN triple diffusion planar type Darlington(For power amplification) Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type Darlington
0.7±0.1
For power amplification Complementary to 2SB949 and 2SB949A
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
Unit: mm
q q
16.7±0.3
q
High foward current transfer ratio hFE High-speed switching Ful | ![]() |
2 | 2SD1275 Panasonic Semiconductor | Silicon PNP epitaxial planar type Darlington Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type Darlington
0.7±0.1
For power amplification Complementary to 2SB949 and 2SB949A
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
Unit: mm
q q
16.7±0.3
q
High foward current transfer ratio hFE High-speed switching Ful | ![]() |
3 | 2SD1275 SavantIC | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1275 2SD1275A
DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB949, 949A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification
PINNING PIN 1 2 3 DESCRIPTION Base Collector Em | ![]() |
4 | 2SD1275A Panasonic Semiconductor | Silicon PNP epitaxial planar type Darlington Power Transistors
2SB949, 2SB949A
Silicon PNP epitaxial planar type Darlington
0.7±0.1
For power amplification and switching Complementary to 2SD1275 and 2SD1275A
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
4.2±0.2
Unit: mm
q q
16.7±0.3
q
High foward current transfer ratio hFE High-speed switch | ![]() |
데이터시트 다운로드![]()
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국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
부품번호 | 상세설명 | 제조업체 | |
2SD0592A | Silicon NPN epitaxial planar type
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat)
0.7±0.1
■ Abs |
![]() Panasonic Semiconductor |
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부품번호 | 상세설명 | 제조업체 | |
2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package |
![]() Panasonic Semiconductor |
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부품번호 | 상세설명 | 제조업체 | |
2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a |
![]() Panasonic Semiconductor |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 사이트맵 : 1, 2 |