2SD1864 데이터시트 PDF ( Data sheet )

2SD1864 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions TO-92LM 塑封封 NPN 半 三 管。Silicon NPN transistor in a TO-92LM Plastic Package. 特征 , Features 和 降低， 2SB1243 互 。 Low VCE(sat),complementary pair with 2SB1243. 用途 , Applications 用于一般功率放大。

Power Transistor (50V, 3A) 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC, IB = 2A , 0.2A) 2) Complements the 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1864 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (

Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Abs

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package

Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a