2SD2253 데이터시트 PDF ( Data sheet )

2SD2253 Silicon NPN Triple Diffused Power Transistor GENERAL DESCRIPTION HORIZONAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV High Speed Switching Applications QUICK REFERENCE DATA SYMBOL TO-3PM CONDITIONS TYP VCB0 VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-Base voltage Col

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2253 DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed APPLICATIONS ·Color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplifi

Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Abs

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package

Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a