2SD601A 데이터시트 PDF ( Data sheet )

2SD601A Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions SOT-23 塑封封 NPN 半 三 管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 , Features 2SB709A 互 。 Complementary pair with 2SB709A.  用途 , Applications 用于普通功率放大。 General power amplifier

Elektronische Bauelemente 2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) CLASSIFICATION OF hFE Product-Rank 2SD601

Production specification Silicon Epitaxial Planar Transistor FEATURES Pb - Mini type package. Lead-free - Complementary to 2SB709A PNP Transistor. - Low collector to emitter saturation voltage VCE(sat). - High forward current transfer ratio hFE. 2SD601A APPLICATIONS - General purpose ampli

SMD Type TransistIoCrs Silicon NPN Epitaxial Planer Type 2SD601A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Abs

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package

Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a