SI1410EDH 데이터시트 PDF ( Data sheet )

Si1410EDH New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.070 @ VGS = 4.5 V 20 0.080 @ VGS = 2.5 V 0.100 @ VGS = 1.8 V ID (A) 3.7 3.4 3.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package

SNAP IN MOUNT ALUMINUM ELECTROLYTIC SI SERIES SUBMINIATURE (SI: Snap in) The SI Snap in series subminiature aluminum electrolytic capacitors are especially suitable for applications requiring high capacitance, low cost, and very small size. In fact, you’ll find these capacitors in some of the most

www.vishay.com N-Channel 30 V (D-S) MOSFET Si1002R Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.560 at VGS = 4.5 V 0.620 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V SC-75A D 3 ID (A) 0.5 0.2 0.2 0.05 Qg (TYP.) 0.72 nC 1 G Top View 2 S Marking Code: L Orderin

Si1010, 1, 2, 3, 4, 5 Ultra Low Power, 16, 8 kB, 12, 10-Bit ADC MCU with Integrated 240 960 MH- EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 A; retains state and RAM contents over full supply range; fast wakeup of < 2 s Less than 600 nA with R